InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess

@article{Alomari2009InAlNGaNMW,
  title={InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess},
  author={Mohammed Alomari and F. Medjdoub and J. F. Carlin and Eric Feltin and Nicolas Grandjean and Andrey Chuvilin and Ute A. Kaiser and Christophe Gaqui{\`e}re and Erhard Kohn},
  journal={IEEE Electron Device Letters},
  year={2009},
  volume={30},
  pages={1131-1133}
}
We report on lattice-matched InAlN/GaN MOSHEMTs with an oxide-filled recess, self-aligned to the gate prepared by thermal oxidation at 800degC in oxygen atmosphere. The device delivered a maximum current density of 2.4 A/mm. Pulse measurements showed no apparent lag effects, indicating a high-quality native oxide. This was confirmed by monitoring the radio-frequency load lines in the time domain. The MOSHEMT yielded a power density of 6 W/mm at a drain voltage as low as 20 V and at 4 GHz, a… CONTINUE READING
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