In-situ reflectance monitoring and characterization of GaN grown by MOCVD

Abstract

Despite rapid progress in the development of optoelectronic and electronic devices based on wide bandgap III-nitride semiconductors, growth of GaN by MOCVD (by far the most effective means of GaN material synthesis) has remained largely a "black-box" process. The optimization and exploration of the vast parameter space has depended solely on ex-situ… (More)

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