In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs

@inproceedings{Reentil2007InsituOR,
  title={In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs},
  author={O. Reentil{\"a} and A. Lankinen and Marco Mattila and Antti S{\"a}yn{\"a}tjoki and T. O. Tuomi and Harri Lipsanen and LM O’Reilly and P. J. McNally},
  year={2007}
}
In order to investigate the possibilities of in-situ monitoring of GaAsN bulk layer growth and the crystal quality concerning the formation of misfit dislocations, GaAsN bulk samples with different layer thicknesses were grown using a metal-organic vapor phase epitaxy system equipped with a normal incidence optical reflectance setup. High-resolution X-ray diffractometry and synchrotron radiation X-ray topography were used to characterize the samples after growth. Combining the results from… CONTINUE READING