In-situ doping of silicon using the gas immersion laser doping (GILD) process

@inproceedings{Carey1989InsituDO,
  title={In-situ doping of silicon using the gas immersion laser doping (GILD) process},
  author={Paul G. Carey and Thomas W. Sigmon},
  year={1989}
}
Abstract In this work we use built in diagnostic capabilities to demonstrate gas immersion laser doping (GILD) as an in-situ doping technique. A HeNe laser reflectivity apparatus measures the silicon melt time during doping, and our melt depth/diffusion simulation program, LASERMELT, is used to predict the silicon melt depth versus melt time. By combining these tools along with previously measured SIMS and RBS profiles, we obtain an accurate in-situ method of determining junction depths… CONTINUE READING