In-situ analysis of optoelectronic properties of twin boundaries in AlGaAs by polarized cathodoluminescence spectroscopy in a TEM.

@article{Ohno2010InsituAO,
  title={In-situ analysis of optoelectronic properties of twin boundaries in AlGaAs by polarized cathodoluminescence spectroscopy in a TEM.},
  author={Yutaka Ohno},
  journal={Journal of electron microscopy},
  year={2010},
  volume={59 Suppl 1},
  pages={
          S141-7
        }
}
Optoelectronic properties of nanoscale twin boundaries (TBs) in indirect-gap AlGaAs layers were studied by polarized cathodoluminescence spectroscopy in a transmission electron microscope. TBs arranged orderly in a short range, i.e. four or more parallel TBs arranged at regular intervals of nanometre length, emitted an intense monochromatic light polarized parallel to the boundaries. The intensity and the photon energy of the light were examined at different temperatures with different electron… CONTINUE READING
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