In-situ Microwave Characterization of Medium-k HfO2 and High-k STO Dielectrics for MIM Capacitors Integrated in Back-End of Line of IC


The complex permittivity microwave characterization of medium-k materials as HfO2 and high-k materials as STO is presented. The characterization method, using coplanar or microstrip waveguides, allows a large band characterization, from 40 MHz to 40 GHz. It also allows investigating these materials with large scale thickness, from 10 nm up to 500 nm, in a… (More)

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