In search of "Forever," continued transistor scaling one new material at a time

@article{Thompson2005InSO,
  title={In search of "Forever," continued transistor scaling one new material at a time},
  author={S. Thompson and R. Chau and T. Ghani and K. Mistry and S. Tyagi and M. Bohr},
  journal={IEEE Transactions on Semiconductor Manufacturing},
  year={2005},
  volume={18},
  pages={26-36}
}
  • S. Thompson, R. Chau, +3 authors M. Bohr
  • Published 2005
  • Mathematics, Materials Science
  • IEEE Transactions on Semiconductor Manufacturing
  • This work looks at past, present, and future material changes for the metal-oxide-semiconductor field-effect transistor (MOSFET). It is shown that conventional planar bulk MOSFET channel length scaling, which has driven the industry for the last 40 years, is slowing. To continue Moore's law, new materials and structures are required. The first major material change to extend Moore's law is the use of SiGe at the 90-nm technology generation to incorporate significant levels of strain into the Si… CONTINUE READING
    Graphene transistors.
    • 1,351
    • PDF
    Sub-10 nm carbon nanotube transistor
    • 520
    • PDF
    Vertical high-mobility wrap-gated InAs nanowire transistor
    • 234
    Integration of highly-strained SiGe materials in 14 nm and beyond nodes FinFET technology
    • 33
    • PDF

    References

    Publications referenced by this paper.
    SHOWING 1-10 OF 76 REFERENCES
    Device scaling limits of Si MOSFETs and their application dependencies
    • 1,191
    • PDF
    A 90-nm logic technology featuring strained-silicon
    • 606
    • PDF
    FinFET scaling to 10 nm gate length
    • 511
    • PDF
    High performance fully-depleted tri-gate CMOS transistors
    • 425
    • PDF
    A logic nanotechnology featuring strained-silicon
    • 443
    • PDF
    A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors
    • 496
    • PDF
    CMOS design near the limit of scaling
    • 343
    • PDF
    Evolution of the MOS transistor-from conception to VLSI
    • 107
    Cramming More Components Onto Integrated Circuits
    • 9,696
    • PDF