In search of "Forever," continued transistor scaling one new material at a time

@article{Thompson2005InSO,
  title={In search of "Forever," continued transistor scaling one new material at a time},
  author={S. Thompson and R. Chau and T. Ghani and K. Mistry and S. Tyagi and M. Bohr},
  journal={IEEE Transactions on Semiconductor Manufacturing},
  year={2005},
  volume={18},
  pages={26-36}
}
  • S. Thompson, R. Chau, +3 authors M. Bohr
  • Published 2005
  • Materials Science, Mathematics
  • IEEE Transactions on Semiconductor Manufacturing
This work looks at past, present, and future material changes for the metal-oxide-semiconductor field-effect transistor (MOSFET). It is shown that conventional planar bulk MOSFET channel length scaling, which has driven the industry for the last 40 years, is slowing. To continue Moore's law, new materials and structures are required. The first major material change to extend Moore's law is the use of SiGe at the 90-nm technology generation to incorporate significant levels of strain into the Si… Expand
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References

SHOWING 1-10 OF 76 REFERENCES
A 90-nm logic technology featuring strained-silicon
FinFET scaling to 10 nm gate length
Evolution of the MOS transistor-from conception to VLSI
High performance fully-depleted tri-gate CMOS transistors
A logic nanotechnology featuring strained-silicon
Scaling fully depleted SOI CMOS
CMOS scaling beyond 0.1 /spl mu/m: how far can it go?
  • Y. Taur
  • Materials Science
  • 1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)
  • 1999
CMOS design near the limit of scaling
...
1
2
3
4
5
...