• DOI:10.1109/TSM.2004.841816
Corpus ID: 25283342

In search of "Forever," continued transistor scaling one new material at a time

@article{Thompson2005InSO,
  title={In search of "Forever," continued transistor scaling one new material at a time},
  author={S. Thompson and R. Chau and T. Ghani and K. Mistry and S. Tyagi and M. Bohr},
  journal={IEEE Transactions on Semiconductor Manufacturing},
  year={2005},
  volume={18},
  pages={26-36}
}

S. Thompson, R. Chau, +3 authors M. Bohr

Published 2005

Mathematics, Materials Science

IEEE Transactions on Semiconductor Manufacturing

This work looks at past, present, and future material changes for the metal-oxide-semiconductor field-effect transistor (MOSFET). It is shown that conventional planar bulk MOSFET channel length scaling, which has driven the industry for the last 40 years, is slowing. To continue Moore's law, new materials and structures are required. The first major material change to extend Moore's law is the use of SiGe at the 90-nm technology generation to incorporate significant levels of strain into the Si… CONTINUE READING

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