In-plane quasi-single-domain BaTiO3 via interfacial symmetry engineering.

@article{Lee2021InplaneQB,
  title={In-plane quasi-single-domain BaTiO3 via interfacial symmetry engineering.},
  author={J W Lee and Kitae Eom and T R Paudel and B Wang and H Lu and Huaixun Huyan and Shane Lindemann and S Ryu and H Lee and T H Kim and Y Yuan and Jacob A. Zorn and S Lei and W M Gao and Thomas Tybell and Veena Gopalan and X Q Pan and Alexei Gruverman and L Q Chen and Evgeny Y. Tsymbal and C. B. Eom},
  journal={Nature communications},
  year={2021},
  volume={12 1},
  pages={
          6784
        }
}
  • J W Lee, K. Eom, +18 authors C. Eom
  • Published 17 September 2021
  • Medicine, Physics
  • Nature communications
The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric… Expand

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