In-plane quantum-dot superlattices of InAs on GaAsSb/GaAs(001) for intermediate band solar-cells

@article{Fujita2011InplaneQS,
  title={In-plane quantum-dot superlattices of InAs on GaAsSb/GaAs(001) for intermediate band solar-cells},
  author={Hiroyuki Fujita and Koki Yamamoto and Jun Ohta and Yoshihito Eguchi and Kazuhiko Yamaguchi},
  journal={2011 37th IEEE Photovoltaic Specialists Conference},
  year={2011},
  pages={002612-002614}
}
Semiconductor quantum-dot superlattices (QD-SLs) have attracted considerable interests for intermediate band solar-cell (IB-SC) applications. In this study, in order to develop the IB-SCs using in-plane QD-SLs, ultra-high density InAs QDs with 4.0×1011 cm−2 were grown on the GaAsSb/GaAs(001) by molecular beam epitaxy. The average lateral size and height of the InAs QDs were 17 nm and 2.8 nm, respectively. In spite of the closely-packed QD structure, the coalescence of neighbouring QDs was… CONTINUE READING