In-plane mobility anisotropy and universality under uni-axial strains in nand p-MOS inversion layers on (100), [110], and (111) Si

@article{Irie2004InplaneMA,
  title={In-plane mobility anisotropy and universality under uni-axial strains in nand p-MOS inversion layers on (100), [110], and (111) Si},
  author={Hitoshi Irie and Koji Kita and Kentaro Kyuno and Akira Toriumi},
  journal={IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.},
  year={2004},
  pages={225-228}
}
An investigation of the inversion layer mobility characteristics on conditions with systematic combinations of three key parameters: surface orientations, in-plane channel directions, and uni-axial strains, was performed. A guiding principle for an optimum combination of above three key parameters in terms of electron and hole mobility enhancement is presented. In addition, it is found experimentally that the definition of the mobility universality should be changed with surface orientations… CONTINUE READING
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