• Corpus ID: 199393944

In fl uence of precursor concentration and growth time on the surface morphology and crystallinity of ¡-Ga 2 O 3 thin fi lms fabricated by mist chemical vapor deposition

@inproceedings{Nakabayashi2018InFU,
  title={In fl uence of precursor concentration and growth time on the surface morphology and crystallinity of ¡-Ga 2 O 3 thin fi lms fabricated by mist chemical vapor deposition},
  author={Yuji Nakabayashi and Satoru Yamada and Satoshi Itoh and Takeshi Kawae},
  year={2018}
}
Single-crystal thin films of gallium oxide (Ga2O3), an ultra-wide bandgap semiconductor, were fabricated on c-plane sapphire by mist chemical vapor deposition (mist CVD). The grown ¡-Ga2O3 thin films had low surface roughness, and we characterized their initial crystal growth phase by using atomic force microscopy and X-ray diffraction. By varying the precursor concentration, we changed the surface roughness and crystallinity of the thin films. The lattice constants of the ¡-Ga2O3 thin films… 

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