In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

@article{Pan2022InSE,
  title={In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices},
  author={Dong Pan and Huading Song and Sha Zhang and Lei Liu and Lianjun Wen and Dunyuan Liao and Ran Zhuo and Zhi-cheng Wang and Zitong Zhang and Shuai Yang and J. Ying and Wentao Miao and Yongqing Li and Runan Shang and Haoqing Zhang and Jianhua Zhao},
  journal={Chinese Physics Letters},
  year={2022}
}
We demonstrate the in situ growth of ultra-thin InAs nanowires with an epitaxial Al film by molecular-beam epitaxy. Our InAs nanowire diameter (∼30 nm) is much thinner than before (∼100 nm). The ultra-thin InAs nanowires are pure phase crystals for various different growth directions. Transmission electron microscopy confirms an atomically abrupt and uniform interface between the Al shell and the InAs wire. Quantum transport study on these devices resolves a hard induced superconducting gap and… 

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