In„Ga...As self-assembled quantum ring formation by molecular beam epitaxy

Abstract

The effect of growth conditions on the morphological properties of InAs/GaAs~001! quantum dots covered by a thin ~,3 nm! GaAs cap has been studied by atomic force microscopy. Each dot turns into an elongated nanostructure at 540 °C upon deposition of the cap in As4 atmosphere, while structures with two humps are obtained when capping at 500 °C. The use of As2 atmosphere instead of As4 at 500 °C leads to the formation of quantum rings. Photoluminescence spectroscopy and polarization photoluminescence ~PL! at 15 K show dramatic changes due to the different kinds of confinement. This allows the possibility of tailoring PL emission by controlling the size and shape. © 2003 American Institute of Physics. @DOI: 10.1063/1.1566799#

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Cite this paper

@inproceedings{Granados2003InGaAsSQ, title={In„Ga...As self-assembled quantum ring formation by molecular beam epitaxy}, author={Daniel Granados and Jorge M Garcı́a}, year={2003} }