Impurity-limited mobility of semiconducting thin wires in n-type gallium arsenide

@article{Wu1998ImpuritylimitedMO,
  title={Impurity-limited mobility of semiconducting thin wires in n-type gallium arsenide},
  author={C. Wu and Chau-Jy Lin},
  journal={Journal of Applied Physics},
  year={1998},
  volume={83},
  pages={1390-1395}
}
The impurity-limited mobility of semiconducting thin wires for the nonparabolic band structure of electrons in n-type gallium arsenide has been investigated by scattering from ionized impurities or from the uniform distribution of remote impurities. Results are shown that the impurity-limited mobility due to scattering from background impurities increases monotonically and slowly with increasing temperature, while the impurity-limited mobility due to scattering from remote impurities increases… Expand
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