• Corpus ID: 222090072

Impurity Band Conduction in Si-doped \b{eta}-Ga2O3 Films

@article{Rajapitamahuni2020ImpurityBC,
  title={Impurity Band Conduction in Si-doped \b\{eta\}-Ga2O3 Films},
  author={Anil Kumar Rajapitamahuni and Laxman Raju Thoutam and Praneeth Ranga and Sriram Krishnamoorthy and Bharat Jalan},
  journal={arXiv: Materials Science},
  year={2020}
}
By combining temperature-dependent resistivity and Hall effect measurements, we investigate donor state energy in Si-doped \b{eta}-Ga2O3 films grown using metal-organic vapor phase epitaxy (MOVPE). High magnetic field Hall effect measurements (H = +/-90 kOe) showed non-linear Hall resistance for T < 150 K revealing two-band conduction. Further analyses revealed carrier freeze-out characteristics in both bands yielding donor state energies of ~ 33.7 and ~ 45.6 meV. The former is consistent with… 

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