Improving the performance of SiC trench MOSFETs under hard switching operation

@article{Mx00E4rz2017ImprovingTP,
  title={Improving the performance of SiC trench MOSFETs under hard switching operation},
  author={Andreas Mx00E4rz and Teresa Bertelshofer and Mark-M. Bakran},
  journal={2017 IEEE 12th International Conference on Power Electronics and Drive Systems (PEDS)},
  year={2017},
  pages={553-558}
}
In this paper the switching performance of the latest SiC trench MOSFET and the behavior of its body diode are analyzed with regard to different stray inductances and dead time. The results show potential and challenges for switching loss reduction as well as effectiveness of different driving methods.