Improving Write Performance for STT-MRAM

@article{Bishnoi2016ImprovingWP,
  title={Improving Write Performance for STT-MRAM},
  author={Rajendra Bishnoi and Mojtaba Ebrahimi and Fabian Oboril and Mehdi Baradaran Tahoori},
  journal={IEEE Transactions on Magnetics},
  year={2016},
  volume={52},
  pages={1-11}
}
Spin-transfer-torque magnetic random access memory (STT-MRAM) is a promising emerging memory technology because of its various advantageous features such as scalability, non-volatility, density, endurance, and soft-error immunity. However, high write energy and long write latency are the major obstacles for this technology. The long write latency of the STT-MRAM is primarily due to two reasons. First, the bit-cell switching is asymmetric, which means that one write direction is significantly… CONTINUE READING

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