Improving STT-MRAM density through multibit error correction

@article{Bel2014ImprovingSD,
  title={Improving STT-MRAM density through multibit error correction},
  author={Brandon Del Bel and Jongyeon Kim and Chris H. Kim and Sachin S. Sapatnekar},
  journal={2014 Design, Automation & Test in Europe Conference & Exhibition (DATE)},
  year={2014},
  pages={1-6}
}
STT-MRAMs are prone to data corruption due to inadvertent bit flips. Traditional methods enhance robustness at the cost of area/energy by using larger cell sizes to improve the thermal stability of the MTJ cells. This paper employs multibit error correction with DRAM-style refreshing to mitigate errors and provides a methodology for determining the optimal level of correction. A detailed analysis demonstrates that the reduction in nonvolatility requirements afforded by strong error correction… CONTINUE READING
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