Improvements in Bi(12)SiO(20) thin-film spatial light modulators.

Abstract

Improvements introduced in Bi(12)SiO(20) thin-film spatial light modulators and consequent increased performance are described. By improving the optical and electrical uniformity of phosphorus-doped Bi(12)SiO(20) substrates and by improving the insulating properties of the insulator, we attained a resolution of higher than 50 line pairs/mm at a 50% modulation transfer function and a contrast ratio of 1000:1. The sensitivity and optical gain, defined as the ratio of output to input power, were also improved. In addition to these improvements, devices with wedge-shaped substrates for coherent readout light were fabricated, and it was shown that their write-in sensitivity and resolution were not affected by the substrate thickness.

DOI: 10.1364/AO.32.005036

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Cite this paper

@article{Nagao1993ImprovementsIB, title={Improvements in Bi(12)SiO(20) thin-film spatial light modulators.}, author={Yuto Nagao and Hajime Sakata and You Mimura}, journal={Applied optics}, year={1993}, volume={32 26}, pages={5036-42} }