Improvement on erase characteristics of SONOS flash memory by bandgap engineering of tunnel oxide

Abstract

We comparatively analyze the erase speed and long-term reliability between the conventional SONOS flash memory and the bandgap engineered SONOS flash memory devices. As a result, the bandgap engineered SONOS device is indeed proven to provide faster erase speed and better long-term data retention characteristics than the conventional SONOS device. 

Topics

4 Figures and Tables

Cite this paper

@article{Li2009ImprovementOE, title={Improvement on erase characteristics of SONOS flash memory by bandgap engineering of tunnel oxide}, author={Dong Hua Li and Byung-Gook Park}, journal={2009 IEEE International Integrated Reliability Workshop Final Report}, year={2009}, pages={138-140} }