Improvement on Optical Properties of GaN Light-Emitting Diode With Mesh-Textured Sapphire Back Delineated by Laser Scriber

@article{Lee2009ImprovementOO,
  title={Improvement on Optical Properties of GaN Light-Emitting Diode With Mesh-Textured Sapphire Back Delineated by Laser Scriber},
  author={Ko-Tao Lee and Yeeu-Chang Lee and Jenq-Yang Chang and Jeng Gong},
  journal={IEEE Photonics Technology Letters},
  year={2009},
  volume={21},
  pages={477-479}
}
The optical properties of gallium nitride light-emitting diode with mesh-textured sapphire back delineated by laser scriber and subsequently coated with silver-copper layers were investigated. This new structure improves the optical characteristics. The electroluminescence and luminous intensities are 30% and 20% stronger than that without mesh-textured trench and silver-copper at 20 mA, respectively. The maximum luminous intensity has 1.6 times enhancement, which is mainly from higher light… CONTINUE READING

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