Improvement of within Wafer Uniformity of Device Parameters by Gradient Temperature Control with Bell Jar Hot Wall RTP

Abstract

This paper presents a method to minimize cross-wafer threshold voltage variation, specifically radial variation, on device wafers using the inherent characteristics and repeatability of a bell-jar hot wall RTP system. The temperature uniformity of Axcelis' bell-jar hot wall RTP is controlled by a three-zone temperature gradient. It is possible to change the… (More)

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