Improvement of switching uniformity and scalability in 1T-1R HfOx-based bipolar resistive memory with Zr inserting layer


1T-1R Zr/HfO<sub>x</sub> RRAM with improved uniformity is proposed, which is due to the easily O<sub>x</sub>idation of Zr layer from both HfO<sub>x</sub> and supporting SiO<sub>2</sub>. The formation of ZrO<sub>x</sub> become a good current limiter which help the device prevent scalability issue. 

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