Improvement of c-Si surface passivation using dual intrinsic a-Si:H layers for silicon heterojunction solar cells

Abstract

Crystalline silicon (c-Si) surface should be passivated effectively to reduce the surface recombination losses for silicon heteroj unction solar cells. To prevent the epitaxial growth of a-Si:H films near c-Si surfaces and improve the effective carrier lifetime, dual passivation layers were obtained using inductively coupled plasma chemical vapor deposition… (More)

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@article{Herschorn2013ImprovementOC, title={Improvement of c-Si surface passivation using dual intrinsic a-Si:H layers for silicon heterojunction solar cells}, author={Sender Herschorn and Chang Bong Yeon and Sun Jin Yun and Jung Wook Lim}, journal={2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)}, year={2013}, pages={1254-1256} }