Improvement of Current Gain in 4H-SiC BJTs by Surface Passivation With Deposited Oxides Nitrided in $\hbox{N}_{2}\hbox{O}$ or NO

@article{Miyake2011ImprovementOC,
  title={Improvement of Current Gain in 4H-SiC BJTs by Surface Passivation With Deposited Oxides Nitrided in \$\hbox\{N\}_\{2\}\hbox\{O\}\$ or NO},
  author={Hiroki Miyake and Tsunenobu Kimoto and Jun Suda},
  journal={IEEE Electron Device Letters},
  year={2011},
  volume={32},
  pages={285-287}
}
We report the improvement of current gain in 4H-SiC bipolar junction transistors (BJTs) by utilizing deposited oxides as a surface passivation layer. Various post deposition annealing processes, including annealing ambient (N2, N2O, and NO) and annealing time, were investigated. We successfully demonstrate SiC BJTs with high current gains (β) of 73 and 102 using deposited oxides annealed in N2O and NO, respectively, whereas BJTs having conventional thermally grown oxides showed a current gain… CONTINUE READING
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4H-SiC MISFETs with nitrogen-containing insulators

  • M. Noborio, J. Suda, S. Beljakowa, M. Krieger, T. Kimoto
  • Phys. Stat. Sol. (A), vol. 206, no. 10, pp. 2374…
  • 2009
Highly Influential
3 Excerpts

Experimental evaluation of different passivation layers on the performance of 3 kV 4H-SiC BJTs

  • R. Ghandi, M. Domeij, +7 authors M. Östling
  • Mater. Sci. Forum, vol. 645–648, pp. 661–664…
  • 2010
1 Excerpt

A new high current gain 4H-SiC bipolar junction transistor with suppressed surface recombination structure: SSR-BJT

  • K. Nonaka, A. Horiuchi, +7 authors H. Iwakuro
  • Mater. Sci. Forum, vol. 615–617, pp. 821–824…
  • 2009
2 Excerpts

Interface properties of metal–oxide–semiconductor structures on 4H- SiC{0001} and (11-20) formed by N2O oxidation

  • T. Kimoto, Y. Kanzaki, M. Noborio, H. Kawano, H. Matsunami
  • Jpn. J. Appl. Phys., vol. 44, no. 3, pp. 1213…
  • 2005
1 Excerpt

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