Improvement of Bottom Oxide Thickness Scaling of Inter-Poly Dielectric by Floating Gate Top Plasma Nitridation

Abstract

This letter concerns the electrical properties of floating gate (FG) that has undergone top nitridation, used in NAND flash memory devices As the dimensions are scaled down to 5 nm and beyond, the use of a thinner inter-poly dielectric (IPD) can provide the required gate coupling ratio, leaving more room for the control gate poly filling between the FG… (More)

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