Improvement in high-k (HfO/sub 2//SiO/sub 2/) reliability by incorporation of fluorine

@article{Seo2005ImprovementIH,
  title={Improvement in high-k (HfO/sub 2//SiO/sub 2/) reliability by incorporation of fluorine},
  author={Kang-ill Seo and Raghavasimhan Sreenivasan and P. Mclntyre and Krishna C. Saraswat},
  journal={IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.},
  year={2005},
  pages={4 pp.-420}
}
We demonstrate that negative bias temperature instability (NBTI) of high-k (HfO<sub>2</sub>/SiO<sub>2</sub>) gate stacks are significantly improved by incorporating fluorine and engineering its concentration profile. We find that F piles up at HfO<sub>2</sub>/SiO <sub>2</sub> interface and diffuses into the underlying SiO<sub>2</sub>/Si interface. The HfO<sub>2</sub>/SiO<sub>2</sub> stack with F shows significantly less CV hysteresis, positive charge trapping and interface states generation… CONTINUE READING

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