Improved thermal stability in SiGe HBTs by emitter layout

@article{Dongyue2008ImprovedTS,
  title={Improved thermal stability in SiGe HBTs by emitter layout},
  author={Jin Dongyue and Zhang Wanrong and Xie Hongyun and Hu Bo Ning and Shen Pei},
  journal={2008 9th International Conference on Solid-State and Integrated-Circuit Technology},
  year={2008},
  pages={168-171}
}
A new emitter layout in SiGe HBT is presented to improve the thermal stability. For comparison, a SiGe HBT with conventional layout is also fabricated. The thermal resistance and I-V characteristics of two types of HBTs at different biases and ambient temperature are measured and compared. Experimental results show that the new emitter layout is very… CONTINUE READING