Improved surface morphology in GaN homoepitaxy by NH3-source molecular-beam epitaxy

@article{Koida2004ImprovedSM,
  title={Improved surface morphology in GaN homoepitaxy by NH3-source molecular-beam epitaxy},
  author={T. Koida and Y. Uchinuma and J. Kikuchi and K. Wang and M. Terazaki and T. Onuma and John F. Keading and Rajat Sharma and Shuji Nakamura and S. Chichibu},
  journal={Journal of Vacuum Science \& Technology B},
  year={2004},
  volume={22},
  pages={2158-2164}
}
GaN homoepitaxial layers of improved surface morphology were obtained by a NH3-source molecular-beam epitaxy method supplying a proper reactive NH3-to-Ga flux ratio (V/III ratio) on the growing surface, combined with a procedure to prevent the surface roughening of the GaN/(0001) Al2O3 epitaxial templates, which were prepared by metalorganic vapor-phase epitaxy. In situ monitoring on the heated templates revealed their thermal decomposition above 700 °C in ultrahigh vacuum, which gave rise to… Expand
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