Improved read noise margin characteristics for single bit line SRAM cell using adiabatically operated word line


Background/Objectives: In the contemporary era, due to the rapid development in various low power VLSI circuits, the primary factors that affect the performance of the circuits are gaining much importance. The static random access memory (SRAM) is one of the significant circuits employed in low power VLSI systems. Many researchers continue focusing on… (More)

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