Improved photovoltaic performance and stability of quantum dot sensitized solar cells using Mn-ZnSe shell structure with enhanced light absorption and recombination control.

@article{Gopi2015ImprovedPP,
  title={Improved photovoltaic performance and stability of quantum dot sensitized solar cells using Mn-ZnSe shell structure with enhanced light absorption and recombination control.},
  author={Chandu V. V. Muralee Gopi and Mallineni Venkata-Haritha and Soo-Kyoung Kim and Hee-jee Kim},
  journal={Nanoscale},
  year={2015},
  volume={7 29},
  pages={
          12552-63
        }
}
To make quantum-dot-sensitized solar cells (QDSSCs) competitive, photovoltaic parameters comparable to those of other emerging solar cell technologies are necessary. In the present study, ZnSe was used as an alternative to ZnS, one of the most widely used passivation materials in QDSSCs. ZnSe was deposited on a TiO2-CdS-CdSe photoanode to form a core-shell structure, which was more efficient in terms of reducing the electron recombination in QDSSCs. The development of an efficient passivation… 

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References

SHOWING 1-10 OF 78 REFERENCES
Boosting power conversion efficiencies of quantum-dot-sensitized solar cells beyond 8% by recombination control.
TLDR
The ability of a novel sequential inorganic ZnS/SiO2 double layer treatment onto the QD-sensitized photoanode for strongly inhibiting interfacial recombination processes in QDSCs while providing improved cell stability is demonstrated.
Band engineering in core/shell ZnTe/CdSe for photovoltage and efficiency enhancement in exciplex quantum dot sensitized solar cells.
TLDR
Characterization under dark and illumination conditions clearly demonstrates that, under light irradiation conditions, the sensitization of ZnTe/CdSe QDs upshifts the CB edge of TiO2 by the level of ∼ 50 mV related to that in the reference cell and results in the enhancement of V(oc) of the corresponding cell devices.
A strategy to improve the energy conversion efficiency and stability of quantum dot-sensitized solar cells using manganese-doped cadmium sulfide quantum dots.
TLDR
The finding provides an effective method for the fabrication of Mn-doped CdS QDs, which can pave the way to further improve the efficiency of future QDSSCs.
A highly efficient (>6%) Cd1−xMnxSe quantum dot sensitized solar cell
Quantum dot sensitized solar cells (QDSCs) have attracted considerable attention recently and become promising candidates for realizing a cost-effective solar cell. The design and synthesis of
Absorption Induced by Mn Doping of ZnS for Improved Sensitized Quantum-Dot Solar Cells
ZnS quantum dots (QDs) have limited application potential in QD sensitized solar cells because of their wide band gap, which does not allow absorption of sunlight in the visible and infrared regions.
Design of injection and recombination in quantum dot sensitized solar cells.
TLDR
It is shown that it is possible to design both injection and recombination in QD sensitized solar cells (QDSCs) by the appropriate use of molecular dipoles and conformal coatings by boosting the energy conversion efficiency of the devices.
CdSe Quantum Dot-Sensitized Solar Cells Exceeding Efficiency 1% at Full-Sun Intensity
Colloidal cadmium selenide (CdSe) quantum dots (QDs) have been prepared and exploited as inorganic dyes to sensitize a large-band-gap TiO 2 layer for QD-sensitized solar cells. The optimized
Highly Efficient Quantum-Dot-Sensitized Solar Cell Based on Co-Sensitization of CdS/CdSe
Cadmium sulfide (CdS) and cadmium selenide (CdSe) quantum dots (QDs) are sequentially assembled onto a nanocrystalline TiO2 film to prepare a CdS/CdSe co-sensitized photoelectrode for QD-sensitized
...
1
2
3
4
5
...