Improved photon detection efficiency of single photon avalanche diodes with buried layer structure

  • Ping Xiang, Yue Xu
  • Published 2016 in
    2016 13th IEEE International Conference on Solid…

Abstract

A single photon avalanche diode (SPAD) device with deep P-well is proposed, which is protected by surrounding P-implantation layer, P buried layer and P+ buried layer. The P+ buried layer of this SPAD device has great help to enhance the uniformity of electric field in avalanche multiplication region. The primary contribution of the P buried layer is to… (More)

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Cite this paper

@article{Xiang2016ImprovedPD, title={Improved photon detection efficiency of single photon avalanche diodes with buried layer structure}, author={Ping Xiang and Yue Xu}, journal={2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)}, year={2016}, pages={691-693} }