Improved photoluminescence of organometallic vapor phase epitaxial AIGaAs using a new gettering technique on the arsine source


defined, and its TED pattern is a typical reciprocal plane (111). The TED pattern was conserved over at least a 130 X 130 flm 2 sample area and no extra spot appeared. This confirms the achievement of a 130 X 130 flm 2 single crystal film by means of the method being discussed here. Figure 2(b) shows that each corner of the rhomboidal patterns is rounded… (More)

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