Improved performance of ultra-thin HfO/sub 2/ CMOSFETs using poly-SiGe gate

@article{Lu2002ImprovedPO,
  title={Improved performance of ultra-thin HfO/sub 2/ CMOSFETs using poly-SiGe gate},
  author={Qiang Lu and Hideki Takeuchi and Xiaofan Meng and T B King and Chenming Hu and Katsunori Onishi and Hag-ju Cho and J. W. Lee},
  journal={2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)},
  year={2002},
  pages={86-87}
}
Poly-SiGe is investigated as the gate material for CMOS transistors with ultra-thin HfO/sub 2/ gate dielectric. Compared with poly-Si, poly-SiGe reduces the gate depletion effect, and also results in thinner EOT of the gate dielectric after 1000/spl deg/C annealing, with low gate leakage maintained. The Si interface quality is also better than that achieved… CONTINUE READING