Improved leakage and ferroelectric properties of Mn and Ti codoped BiFeO3 thin films

@article{Kawae2009ImprovedLA,
  title={Improved leakage and ferroelectric properties of Mn and Ti codoped BiFeO3 thin films},
  author={Takeshi Kawae and Yuki Terauchi and Hisashi Tsuda and Minoru Kumeda and Akiharu Morimoto},
  journal={Applied Physics Letters},
  year={2009},
  volume={94},
  pages={112904}
}
Polycrystalline BiFeO3 (BFO), Ti-doped BFO, Mn-doped BFO, and (Mn, Ti)-codoped BFO (BFMT) thin films were fabricated on Pt/SrTiO3 (100) substrate by pulsed laser deposition. Observed leakage current behavior in those ion-doped BFO films indicated the dominance of space-charge-limited current in the high electric field region. The leakage current of the BFMT film was much reduced in relation to the other films due to the formation of deep traps. In the BFMT film, well saturated P-E hysteresis… 

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References

SHOWING 1-10 OF 15 REFERENCES
Reduced Leakage Current and Ferroelectric Properties in Nd and Mn Codoped BiFeO3 Thin Films
Polycrystalline BiFeO3 (BFO), Nd-doped (BNF), Mn-doped (BFM), and (Nd,Mn)-codoped BiFeO3 (BNFM) thin films were fabricated on Pt/SrTiO3(100) substrate by pulsed laser deposition. According to the
Studies on leakage mechanisms and electrical properties of doped BiFeO3 films
The effects of La and/or Ti doping on crystallization, surface morphology, and electric properties of bismuth ferrite (BFO) films were investigated. All films consisted of single perovskite phase
Microstructure and frequency dependent electrical properties of Mn-substituted BiFeO3 thin films
Mn-substituted (0–10at.%) BiFeO3 (BFO) thin films were fabricated by chemical solution deposition on Pt∕Ti∕SiO2∕Si substrate. X-ray diffraction analysis revealed that no secondary phase appeared even
Effects of Gd substitution on structure and ferroelectric properties of BiFeO3 thin films prepared using metal organic decomposition
BiFeO3 and Bi1−xGdxFeO3 (BGFO) (x=0.03, 0.05, 0.07, 0.10, and 0.15) thin films were deposited on Pt∕Ti∕SiO2∕Si substrates using a metal organic decomposition process. X-ray diffraction results show
dc leakage behavior in vanadium-doped bismuth titanate thin films
The dc leakage current behavior and its thickness dependence in vanadium-doped bismuth titanate thin films have been investigated over a wide range of temperatures. The leakage current behavior was
Effect of Nd dopant on magnetic and electric properties of BiFeO3 thin films prepared by metal organic deposition method
Polycrystalline Bi1−xNdxFeO3 (x=0–0.15) thin films were prepared on (111) Pt∕Ti∕SiO2∕Si substrates via metal organic deposition method. The effect of Nd dopant on the structural, electric, and
Leakage mechanisms in BiFeO3 thin films
The authors report results of transport studies on high quality, fully epitaxial BiFeO3 thin films grown via pulsed laser deposition on SrRuO3∕DyScO3 (110) substrates. Ferroelectric tests were
Soft chemical deposition of Bi Fe O 3 multiferroic thin films
BiFeO3 thin films free of secondary phases were obtained by the soft chemical solution on Pt(111)∕Ti∕SiO2∕Si substrates after annealing at 500°C for 2h. The film grown in the (100) direction
Epitaxial BiFeO3 Multiferroic Thin Film Heterostructures
TLDR
Enhanced polarization and related properties in heteroepitaxially constrained thin films of the ferroelectromagnet, BiFeO3, and combined functional responses in thin film form present an opportunity to create and implement thin film devices that actively couple the magnetic and ferroelectric order parameters.
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