Improved empirical DC I–V model for 4H-SiC MESFETs

@article{Cao2008ImprovedED,
  title={Improved empirical DC I–V model for 4H-SiC MESFETs},
  author={QuanJun Cao and Yimen Zhang and Yuming Zhang and HongLiang Lv and YueHu Wang and Xiaoyan Tang and Hui Guo},
  journal={Science in China Series F: Information Sciences},
  year={2008},
  volume={51},
  pages={1184-1192}
}
A novel empirical large signal direct current (DC) I-V model is presented considering the high saturation voltage, high pinch-off voltage, and wide operational range of drain voltage for 4H-SiC MESFETs. A comparison of the presented model with Statz, Materka, Curtice-Cubic, and recently reported 4H-SiC MESFET large signal I-V models is made through the… CONTINUE READING