• Materials Science, Engineering
  • Published in SPIE Advanced Lithography 2002
  • DOI:10.1117/12.473420

Improved characteristics of rainbow defects with novel wafer edge exposure technique

@inproceedings{Shim2002ImprovedCO,
  title={Improved characteristics of rainbow defects with novel wafer edge exposure technique},
  author={Kew-Chan Shim and Myoung-soo Kim and Eung-Sok Lee and Chang-Seong Lee and Chul-Seung Lee and Myung-Goon Gil and Bong-Ho Kim and Jae-Sig In and Tae Bong Yoon and Jai-soon Kim},
  booktitle={SPIE Advanced Lithography},
  year={2002}
}
The demand for manufacturing integrated circuit with high circuit speed and high packing density requires reduced feature sizes in ULSI structures. As the device feature size shrinks below sub-130 nm it needs the tight control of defect reduction in lithography process. Especially, resist peeling at the wafer edge is one of the major sources for particle generation. The WEE process removes resist up to a width of a few mm from the wafer edge in order to prevent particle generation in succeeding… CONTINUE READING

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