Improved carrier mobility in few-layer MoS2 field-effect transistors with ionic-liquid gating.

@article{Perera2013ImprovedCM,
  title={Improved carrier mobility in few-layer MoS2 field-effect transistors with ionic-liquid gating.},
  author={Meeghage Madusanka Perera and Ming-Wei Lin and Hsun-Jen Chuang and Bhim Chamlagain and Chongyu Wang and Xuebin Tan and Mark Ming-Cheng Cheng and David Tom{\'a}nek and Zhixian Zhou},
  journal={ACS nano},
  year={2013},
  volume={7 5},
  pages={4449-58}
}
We report the fabrication of ionic liquid (IL)-gated field-effect transistors (FETs) consisting of bilayer and few-layer MoS2. Our transport measurements indicate that the electron mobility μ ≈ 60 cm(2) V(-1) s(-1) at 250 K in IL-gated devices exceeds significantly that of comparable back-gated devices. IL-FETs display a mobility increase from ≈ 100 cm(2) V(-1) s(-1) at 180 K to ≈ 220 cm(2) V(-1) s(-1) at 77 K in good agreement with the true channel mobility determined from four-terminal… CONTINUE READING
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