Improved Short-Channel Characteristics With Long Data Retention Time in Extreme Short-Channel Flash Memory Devices

@article{Gupta2016ImprovedSC,
  title={Improved Short-Channel Characteristics With Long Data Retention Time in Extreme Short-Channel Flash Memory Devices},
  author={Deepika Gupta and Santosh Kumar Vishvakarma},
  journal={IEEE Transactions on Electron Devices},
  year={2016},
  volume={63},
  pages={668-674}
}
Owing to the scaling demands, source/drain (S/D) junction engineering has evolved as a promising technique to improve the performance and reliability of NAND flash memory devices. In this paper, we investigate the impact of S/D doping lateral straggle σL on the program characteristics, data retention, and short-channel effects (SCEs) for sub-25-nm NAND… CONTINUE READING