Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment

@inproceedings{Chu2008ImprovedPO,
  title={Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment},
  author={Rongming Chu and Christiane Poblenz and Man Hoi Wong and Sansaptak Dasgupta and Siddharth Rajan and Y. Z. Pei and F. Recht and Likun Shen and James S. Speck and Umesh K. Mishra},
  year={2008}
}
High performance AlGaN/GaN high electron mobility transistors grown by plasma-assisted molecular beam epitaxy were fabricated. An integrated slant field-plate was used to suppress the DC-RF dispersion and enhance the breakdown. A recessed-gate structure was adopted to increase the cutoff frequency from 17.5 to 22 GHz. And a CF4-plasma treatment prior to gate metallization was found effective in reducing the gate leakage by one order of magnitude and improving the stability of the RF power… CONTINUE READING

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