Improved Nb SIS devices for heterodyne mixers between 700 GHz and 1.3 THz with NbTiN transmission lines using a normal metal energy relaxation layer

@article{Westig2013ImprovedNS,
  title={Improved Nb SIS devices for heterodyne mixers between 700 GHz and 1.3 THz with NbTiN transmission lines using a normal metal energy relaxation layer},
  author={M. Westig and S. Selig and K. Jacobs and T. Klapwijk and C. Honingh},
  journal={Journal of Applied Physics},
  year={2013},
  volume={114},
  pages={124504}
}
In this paper, we demonstrate experimentally the implementation of a niobium-trilayer junction with an aluminum-oxide tunnel barrier, embedded in a high-gap superconducting niobium-titanium-nitride circuit. Previously reported heating by quasiparticle trapping is removed by inserting a normal metal layer of gold between the niobium junction and the niobium-titanium-nitride layer. We analyze in dc-characterization measurements the cooling of the nonequilibrium quasiparticles in various device… Expand
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