Improved Fault Tolerant SRAM Cell Design & Layout in 130nm Technology
@inproceedings{Radhakrishnan2014ImprovedFT,
title={Improved Fault Tolerant SRAM Cell Design \& Layout in 130nm Technology},
author={Govind Radhakrishnan},
year={2014}
}..................................................................................................iii TABLE OF CONTENTS....................................................................................iv LIST OF FIGURES.........................................................................................vii LIST OF TABLES...........................................................................................xi ABBREVIATIONS…
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One Citation
Evaluation of Single Event Effects Using the Ultrafast Pulsed Laser Facility at the Saskatchewan Structural Sciences Centre
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Single event effects have been an issue in microelectronic devices and circuits for some time, especially those used in radiation-intense environments such as space. Traditionally, devices have been…
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