• Corpus ID: 56702728

Improved Fault Tolerant SRAM Cell Design & Layout in 130nm Technology

@inproceedings{Radhakrishnan2014ImprovedFT,
  title={Improved Fault Tolerant SRAM Cell Design \& Layout in 130nm Technology},
  author={Govind Radhakrishnan},
  year={2014}
}
..................................................................................................iii TABLE OF CONTENTS....................................................................................iv LIST OF FIGURES.........................................................................................vii LIST OF TABLES...........................................................................................xi ABBREVIATIONS… 

Evaluation of Single Event Effects Using the Ultrafast Pulsed Laser Facility at the Saskatchewan Structural Sciences Centre

Single event effects have been an issue in microelectronic devices and circuits for some time, especially those used in radiation-intense environments such as space. Traditionally, devices have been

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