Corpus ID: 56702728

Improved Fault Tolerant SRAM Cell Design & Layout in 130nm Technology

@inproceedings{Radhakrishnan2014ImprovedFT,
  title={Improved Fault Tolerant SRAM Cell Design & Layout in 130nm Technology},
  author={Govindakrishnan Radhakrishnan},
  year={2014}
}
  • Govindakrishnan Radhakrishnan
  • Published 2014
  • Computer Science
  • ..................................................................................................iii TABLE OF CONTENTS....................................................................................iv LIST OF FIGURES.........................................................................................vii LIST OF TABLES...........................................................................................xi ABBREVIATIONS… CONTINUE READING
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    Evaluation of Single Event Effects Using the Ultrafast Pulsed Laser Facility at the Saskatchewan Structural Sciences Centre
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