Improved Electrothermal Ruggedness in SiC MOSFETs Compared With Silicon IGBTs

@article{Alexakis2014ImprovedER,
  title={Improved Electrothermal Ruggedness in SiC MOSFETs Compared With Silicon IGBTs},
  author={Petros Alexakis and Olayiwola Alatise and Ji Hu and Saeed Jahdi and Li Ran and Phil Mawby},
  journal={IEEE Transactions on Electron Devices},
  year={2014},
  volume={61},
  pages={2278-2286}
}
A 1.2-kV/24-A SiC-MOSFET and a 1.2-kV/30-A Si-Insulated gate bipolar transistor (IGBT) have been electrothermally stressed in unclamped inductive switching conditions at different ambient temperatures ranging from -25 °C to 125 °C. The devices have been stressed with avalanche currents at their rated currents and 40% higher. The activation of the parasitic bipolar junction transistor (BJT) during avalanche mode conduction results from the increased body resistance causing a voltage drop between… CONTINUE READING
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