Improved COMFETs with fast switching speed and high-current capability

@article{Goodman1983ImprovedCW,
  title={Improved COMFETs with fast switching speed and high-current capability},
  author={Alvin Malcolm Goodman and John P. Russell and L. Goodman and Charles J. Nuese and John Manning Savidge Neilson},
  journal={1983 International Electron Devices Meeting},
  year={1983},
  pages={79-82}
}
Conventional vertical power MOSFETs are limited at high voltages (>500V) by the appreciable resistance of their epitaxial drain region. In a new MOS-gate controlled device called a COMFET (or an IGR), this limitation is overcome by modulating the conductivity of the resistive drain region, thereby reducing the on-resistance of the device by a factor of at least 10. However, the device previously described is slow in turn-off, having a fall time in the range 8 to 40 µs. The purpose of our… 

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