Imprint Lithography with 25-Nanometer Resolution

  title={Imprint Lithography with 25-Nanometer Resolution},
  author={Stephen Y. Chou and Peter R. Krauss and Preston J. Renstrom},
  pages={85 - 87}
A high-throughput lithographic method with 25-nanometer resolution and smooth vertical sidewalls is proposed and demonstrated. The technique uses compression molding to create a thickness contrast pattern in a thin resist film carried on a substrate, followed by anisotropic etching to transfer the pattern through the entire resist thickness. Metal patterns with a feature size of 25 nanometers and a period of 70 nanometers were fabricated with the use of resist templates created by imprint… Expand
High aspect pattern fabrication by nano imprint lithography using fine diamond mold
  • Y. Hirai, S. Yoshida, +4 authors H. Sumitani
  • Materials Science
  • 2002 International Microprocesses and Nanotechnology Conference, 2002. Digest of Papers.
  • 2002
Nano imprint lithography is an attractive fine lithographic method to obtain nano patterns by using low cost process and materials., Various applications have been demonstrated to utilize this fineExpand
Sub-10 nm imprint lithography and applications
Nanoimprint lithography (NIL) is a new lithography paradigm that is based on deformation of a resist by compression molding rather than altering its chemical structure by radiation, and is designedExpand
Low-cost shrink lithography with sub-22 nm resolution
A low-cost shrink lithogragphy technique with 21 nm resolution is presented in this paper. The shrink lithography uses embossing approach to pattern the heat-shrink polymer film, and thermally shrinkExpand
One-step lithography for various size patterns with a hybrid mask-mold
Nanoimprint lithography (NIL) has been successfully employed in nanoscale patterning, however, it is known to have limitations in replicating large-scale (hundreds of microns and larger) andExpand
Step and repeat UV nanoimprint lithography on pre-spin coated resist film: a promising route for fabricating nanodevices.
A step and repeat UV nanoimprint lithography process on pre-spin coated resist film is demonstrated for patterning a large area with features sizes down to sub-15 nm, suitable for fabricating numerous nanodevices. Expand
Nanocube Imprint Lithography
The high-fidelity nanocube patterning combined with the previously demonstrated epitaxial overgrowth can enable curved (single) crystals from solution at room temperature or highly efficient transparent conductors. Expand
Micro-/nano-lithography based on the contact transfer of thin film and mask embedded etching
This paper reports a simple but useful contact imprinting method for micro- and nano-patterning and fabrication. It utilizes an anti-adhesion layer to release a patterned metal film from a mold to aExpand
Fabrication of sub-micron high aspect ratio diamond structures with nanoimprint lithography
Polycrystalline diamond with optical quality has been patterned using nanoimprint lithography. Nanoimprint lithography is a rather new method for fabrication of resist structures with features sizesExpand
Nanoimprint lithography for a large area pattern replication
We report on replication of high resolution patterns over a 4 in. wafer area by imprint lithography with a commercial hydraulic press and a pair of hot plates. The experiments confirm that theExpand
Flexible devices fabricated by a plate-to-roll nanoimprint lithography system.
To improve the quality of the imprinted patterns, a compliant mechanism which can realize passive alignment and minimize the lateral displacement between template and substrate is proposed. Expand


Fabrication of metallic nanowires with a scanning tunneling microscope
A procedure to pattern thin metal films on a nanometer scale with a scanning tunneling microscope (STM) operating in air is reported. A 30 nm film of hydrogenated amorphous silicon (a‐Si:H) isExpand
10 nm electron beam lithography and sub-50 nm overlay using a modified scanning electron microscope
Gratings of 10 nm wide metal lines 30 nm apart, and quantum transistor gates with 10 nm wide gaps over 300 nm long between two metal rectangles have been repeatedly achieved on thick GaAs substratesExpand
Replication of 175‐Å lines and spaces in polymethylmethacrylate using x‐ray lithography
A new technique for fabricating high contrast x‐ray masks with simple patterns of lines and spaces less than 50 A in width is described. The successful replication of 175‐A lines and spaces inExpand
250‐Å linewidths with PMMA electron resist
25‐nm‐wide lines and spaces have been fabricated in 22.5‐nm‐thick films of PdAu (40 : 60) using electron‐beam exposure and polymethylmethacrylate (PMMA) resist. A high‐resolution scanningExpand
Nanoscale patterning and oxidation of H‐passivated Si(100)‐2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope
Nanoscale patterning of the hydrogen terminated Si(100)‐2×1 surface has been achieved with an ultrahigh vacuum scanning tunneling microscope. Patterning occurs when electrons field emitted from theExpand
Absence of resolution degradation in X-ray lithography for l from 4.5 nm to 0.83 nm
Abstract We have investigated the effect of Auger and photoelectrons on the resolution of x-ray lithography by comparing exposures made in PMMA with CK, CuL, and AlK x-rays. For all three wavelengthsExpand
Evidence for defect isomers is scarce, although they have been observed with scanning-tunneling microscopy
  • Institut fOr Physik, Theoretische Physik Ill, Technische Universitat Chemnitz-Zwickau,
  • 1996
Ciochon, in Anthropoid Origins
    Suborder Anthropoidea, Family Eosimiidae, Eosimias centennicus, n. sp. Holotype: REFERENCES AND NOTES
    • Order Primates
    Tabrum for fossil preparation. Financial support from the L. S. B. Leakey Foundation, the National Geographic Society, NSF, and the Carnegie Museum of Natural History is gratefully acknowledged