Implementation of the symmetric doped double-gate MOSFET model in Verilog-A for circuit simulation


Recently we developed a model for symmetric double-gate MOSFETs (SDDGM) that, for the first time, considers the doping concentration in the Si film in the complete range from 1 10 to 3 10 cm . The model covers a wide range of technological parameters and includes short channel effects. It was validated for different devices using data from simulations, as… (More)


7 Figures and Tables