Implantation-assisted synthesis of gallium oxide nanoribbons on gallium arsenide using carbon and nitrogen

@inproceedings{Lo2007ImplantationassistedSO,
  title={Implantation-assisted synthesis of gallium oxide nanoribbons on gallium arsenide using carbon and nitrogen},
  author={Kin Cheung Lo and H. P. Ho and Katherine Y. Fu and Pual K Chu},
  year={2007}
}
Abstract We have synthesized gallium oxide (Ga 2 O 3 ) nanoribbons and nanowires on gallium arsenide (GaAs) substrate by using plasma immersion ion implantation (PIII) and rapid thermal annealing (RTA). Semi-insulating GaAs was treated with PIII of nitrogen, oxygen, acetylene (C 2 H 2 ) or argon ions. For samples implanted with N 2 , and C 2 H 2 ions, subsequent RTA at 950 °C within 2 min produced Ga 2 O 3 nanoribbons on the substrate surface. Our results suggest that each implanted species… CONTINUE READING

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