Implant damage and diffusion behavior of indium in silicon-on-insulator

Ion implant damage and diffusion behavior of indium implanted into the separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) substrates at different energies and doses are studied. Rutherford backscattering spectrometry in channeling mode (RBS/C) and secondary ion mass spectrometry (SIMS) are used to characterize our samples. After… (More)