Impacts of fin width scaling on the electrical characteristics of 10-nm FinFET at different metal gate work function

@article{Othman2017ImpactsOF,
  title={Impacts of fin width scaling on the electrical characteristics of 10-nm FinFET at different metal gate work function},
  author={Nurul Aida Farhana Othman and Sharifah Wan Muhamad Hatta and Norhayati Soin},
  journal={2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)},
  year={2017},
  pages={256-259}
}
This paper investigates the effects of top fin width scaling (Wtop = 4, 6, 8 nm) of p-and n-type 10-nm FinFET on the electrical performance of the device, specifically optimized for low performance (LP) and high performance (Hp) devices. The work also studies the correlation of the metal work function to the device performance. It is observed that the… CONTINUE READING