Impacts of O2 content on the properties of ZnO thin films prepared by magnetron sputtering

Abstract

A series of experiments for ZnO thin films were made by reactive DC magnetron sputtering different oxygen content in mixed gases. ZnO thin films prepared at 40% O2 content exhibited excellent properties, such as high transmittance, high band-gap energy. These features are benefit for the preparation of ZnO thin film transistors. 

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